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these to-92 mc sidactor devices are intended for applications sensitive to load values. typically, high speed connections, such as xdsl and t1/e1, require a lower capacitance. c o values for the microcapacitance device are 40 percent lower than a standard ec part. this mc sidactor series enables equipment to comply with various regulatory requirements including gr 1089, itu k.20, k.21, and k.45, iec 60950, ul 60950, and tia-968-a (formerly known as fcc part 68) without the need of series resistors. * l in part number indicates roh s compliance. for non-rohs compliant device, delete l from part number. for surge ratings, see table below. general notes: ? all measurements are made at an ambient temperature of 25 c. i pp applies to -+40 c through +85 c temperature range. ? i pp is a repetitive surge rating and is guaranteed for the life of the product. ? listed sidactor devices are bi-directional. all electrical parameters and surge ratings apply to forward and reverse polarities. ? v drm is measured at i drm. ? v s is measured at 100 v/s. ? special voltage (v s and v drm ) and holding current (i h ) requirements are available upon request. * current waveform in s ** voltage waveform in s electrical parameters part number * v dr m volts v s volts v t volts i dr m amps i s mamps i t amps i h mamps p0080ec m cl 6 25 4 5 800 2.2 50 p0 3 00ec m cl 25 40 4 5 800 2.2 50 p0640ec m cl 58 77 4 5 800 2.2 150 p0720ec m cl 65 88 4 5 800 2.2 150 p0900ec m cl 75 98 4 5 800 2.2 150 p1100ec m cl 90 130 4 5 800 2.2 150 p1 3 00ec m cl 120 160 4 5 800 2.2 150 p1 5 00ec m cl 140 180 4 5 800 2.2 150 p1800ec m cl 170 220 4 5 800 2.2 150 p2 3 00ec m cl 190 260 4 5 800 2.2 150 p2600ec m cl 220 300 4 5 800 2.2 150 p 3 100ec m cl 275 350 4 5 800 2.2 150 p 35 00ec m cl 320 400 4 5 800 2.2 150 s urge ratings in amps s eries i pp i t sm 5 0 / 60 hz di/dt 0.2x 3 10 * 0. 5 x700 ** 2x10 * 2x10 ** 8x20 * 1.2x 5 0 ** 10x160 * 10x160 ** 10x 5 60 * 10x 5 60 ** 5 x 3 20 * 9x720 ** 10x 3 60 * 10x 3 60 ** 10x1000 * 10x1000 ** 5 x 3 10 * 10x700 ** amps amps amps amps amps amps amps amps amps amps amps/s c 50 500 400 200 150 200 175 100 200 30 500
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note: off-state capacitance (c o ) is measured at 1 mhz with a 2 v bias. thermal considerations package s ymbol parameter value unit to-92 t j operating junction temperature range -40 to +150 c t s storage temperature range -65 to +150 c r ja thermal resistance: junction to ambient 90 c/w capacitance values part number pf m in m ax p0080ec m cl 35 75 p0 3 00ec m cl 25 45 p0640ec m cl 55 85 p0720ec m cl 50 75 p0900ec m cl 45 70 p1100ec m cl 45 70 p1 3 00ec m cl 40 60 p1 5 00ec m cl 35 55 p1800ec m cl 35 50 p2 3 00ec m cl 30 50 p2600ec m cl 30 45 p 3 100ec m cl 30 45 p 35 00ec m cl 25 40
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& i h i t i s i drm v drm v t + v -v +i -i v s v-i characteristics 50 100 0 t r t d 0 peak value half value t C time (s) i pp C peak pulse current C %i pp t r = rise time to peak value t d = decay time to half value waveform = t r x t d t r x t d pulse waveform -8 -40 -20 0 20 40 60 80 100 120 140 160 -6 -4 0 2 4 6 8 10 12 14 junction temperature (t j ) C ?c percent of v s change C % 25 ?c normalized v s change versus junction temperature 0.4 -40 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 case temperature (t c ) C ?c ratio of i h i h (t c = 25 ?c) 25 ?c normalized dc holding current versus case temperature
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